si pin photodiode s12028 enhanced near ir sensitivity, using a mems techonology ir-enhanced www.hamamatsu.com t he s12028 is si pin photodiode that offers enhanced near infrared sensitivity due to a mems structure formed on the backside of the photodiode. the s12028 offers signi cantly higher sensitivity than our previous product (s5821). analytical instruments nox detection yag laser monitor high sensitivity in near infrared range: 0.5 a/w ( =1060 nm) photosensitive area: 1.2 mm 1 high reliability package : 2-pin to-18 parameter speci cation unit photosensitive area 1.2 mm package to-18 - window material borosilicate glass - parameter symbol condition min. typ. max. unit spectral response range - 360 to 1140 - nm peak sensitivity wavelength p - 980 - nm photosensitivity s = p, v r =10 v 0.55 0.68 - a/w =1060 nm, v r =10 v 0.4 0.5 - short circuit current isc 100 lx , 2856 k - 1.2 - a dark current i d v r =10 v - 0.05 2 na rise time tr v r =10 v, r l =1 k =1060 nm 10% to 90% -10- s terminal capacitance ct v r =10 v, f=1 mhz -46pf parameter symbol condition speci cation unit reverse voltage v r max ta=25 c 20 v operating temperature topr -40 to +100 c storage temperature tstg -55 to +125 c features applications structure absolute maximum ratings electrical and optical characteristics (ta=25 c) note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings.
si pin photodiode s12028 2 spectral response wavelength (nm) photosensitivity (a/w) 200 600 1000 1200 400 800 0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 (typ. ta=25 c, v r =10 v ) qe=100% s12028 s5821 kpinb0376eb photosensitivity temperature characteristics wavelength (nm) temperature coefficient (%/ c) 300 400 1200 1000 1100 700 600 500 900 800 -0.5 0.5 0 1.0 1.5 (typ. v r =10 v) s5821 s12028 kpinb0377eb dark current vs. reverse voltage 1 pa 10 pa 100 pa 1 na 10 na 0.01 0.1 1 10 100 reverse voltage (v) dark current (typ. t a =25 c) kpinb0378ea terminal capacitance vs. reverse voltage 0.1 1 100 10 1 pf 10 pf 100 pf 1 nf reverse voltage (v) terminal capacitance (typ. f=1 mhz) kpinb0379ea
cat. no.kpin1083e01 oct. 2012 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice du e to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. si pin photodiode s12028 information described in this material is current as of october, 2012. kpina0112ea dimensional outline (unit: mm) (8.5) 2.8 3.6 0.2 4.7 0.1 2.54 0.2 1.0 1.0 3.0 0.1 45 x y 5.4 0.2 0.45 lead 1.2 photosensitive area photosensitive surface borosilicate glass connected to case distance from photosensitive area center to cap center -0.2x+0.2 -0.2y+0.2 the borosilicate glass window may extend a maximum of 0.2mm above the upper surface of the cap. 3
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